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13/6/2006· On a p-type monocrystalline silicon wafer of resistivity 1–2 Ω cm, porous silicon is formed by the anodic etching method in a two-pond cell specially developed for the purpose as shown in figure 1() [].The area of the silicon sample is 2 × 2 cm of which a circular area of diameter 1.3 cm is exposed to the electrolyte for anodic etching for porous silicon formation.

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Will micro-supercapacitors become on-chip powerhouses after first successful matching of porous carbon with silicon the researchers exposed a 5 mm-thick ceramic plate of titanium carbide to

Silicon carbide | chemical compound | Britannica

Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. More

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Formation of dense silicon carbide by liquid silicon infiltration of carbon with engineered structure - Volume 23 Issue 5 - Jesse C. Margiotta, Dajie Zhang, Dennis C. Nagle, Caitlin E. Feeser Fully dense and net-shaped silicon carbide monoliths were produced by

Light emitting diode with porous SiC substrate and …

6/12/2005· Fabriing porous silicon carbide 1994-12-27 Shor et al. 204/129.3 5200022 Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product 1993-04-06 Kong et al. 156/612

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