Wolfspeed was first to launch a GaN on SiC HEMT (1998), first with a GaN HEMT MMIC grown on SiC substrate and, not coincidentally, first to successfully synthesize silicon carbide, in 1987. Over the last 30 years Wolfspeed has launched multiple generations of the world’s most powerful, energy efficient SiC and GaN on SiC devices for use in high-power RF telecommuniions and aerospace
Sponsored content The continual drive for greater efficiency and power density in power conversion systems is leading to the expanded use of silicon carbide (SiC). This wide-bandgap semiconductor has a dielectric breakdown capability 10 times that of silicon with
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Silicon Carbide (SiC) Inverter Technology Increases Efficiency to 99% Silicon Carbide (SiC) is a synthetically produced crystalline compound of silicon and carbon. It features properties such as strength, resistance to high temperatures and high electrical conductivity.
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